国家/地区
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2021（2）
申请年 2019（2）
专利权人 NAT CHUNGSHAN INST SCI TECHNOLOGY（2）

Chemical synthesis method to fabricate boron carbide powders, comprises e.g. formulating precursor solution comprising boron source, liquid organic carbon source and catalyst.

HSU W, CHEN Y, WANG H, HUANG K

Nitride transistor structure, has barrier layer arranged on channel layer, metal electrode module arranged on barrier layer, and gate arranged between source and drain, where carbon doping concentration of channel layer is greater than specific value.

LIN J C, KE W C, CHANG Y C, CHIANG C Y, CHANG K J, CHEN C T, LIU G S