国家/地区 日本（2） 世界知识产权组织（2）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C23C016/01（2）
发明人 HASEGAWA MASATAKA（2） ISHIHARA MASATOU（2）
公开年
申请年
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（2）

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K