国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 TANG S（2）
公开年
申请年 2013（2）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q