国家/地区 中国（31）
IPC部 H（23） G（6） C（3）
B（2）
IPC大类 H01（22） G01（5） C01（3）
IPC小类 H01L（21） C01B（3） G01J（2）
G01N（2）
IPC H01L021/768（5） H01L021/336（4） H01L023/532（4）
H01L029/78（4） H01L023/522（3） H01L031/028（3）
C01B031/04（2） H01L029/10（2） H01L029/16（2）
H01L029/51（2） H01L031/09（2） H01L031/113（2）
H01L031/18（2）
发明人 KANG X（18） CHEN S（6） HU S（5）
LI M（5） ZUO Q（5） SHEN R（3）
ZENG S（3） ZHU J（3） SHANG E（2）
SHE S（2） WU Q（2） ZHAO Y（2）
ZHONG M（2） ZHONG X（2）
公开年 2018（7） 2015（6） 2020（6） 2016（3） 2017（3） 2012（2） 2014（2）
申请年 2014（6）  2017（6）  2015（5）  2020（5）  2018（4）  2011（2）  2019（2） 
专利权人 SHANGHAI INTEGRATED CIRCUIT RES DEV CE（31）

Nanowire electrode structure comprises substrate and nanowire array on substrate, where nanowire array comprises nanowire structures comprising nanowire intermediate core, cladding shell covering nanowire intermediate core, and void layer.

WU Q, ZHU J, LIN W

Air gap graphene field effect transistor structure, has channel whose surfaces are covered with air or vacuum contact, and gate electrode overlapped with source electrode and drain electrode, where channel is provided with air gap.

KANG X, CHEN S, ZHONG X, SHEN R

Method for preparing flexible humidity sensor, involves performing electrode preparation, insulating dielectric layer preparation, and graphene oxide deposition preparation on flexible substrate and performing through hole treatment.

SHEN R

Preparation method of humidity sensor, involves decompressing, subliming solvent in graphene oxide dispersion solid, and forming three-dimensional sponge-shaped graphene oxide dielectric film between electrodes.

SHEN R

Photo-sensitive resistor for use in sensor has graphene layer to transmit electrons excited by quantum dot of incident light to electrodes when incident light enters photo-sensitive resistor main body to change resistance value of main body.

KANG X, ZHONG X

Method for preparing high-conductivity copper/graphene composite interconnection line, involves injecting graphene precursor into copper interconnection layer to form copper/graphene composite interconnection line in through hole.

CHEN Z, ZENG S

Preparing graphene channel structure comprises e.g. providing semiconductor substrate, and depositing thermal oxide layer on semiconductor substrate, etching thermal oxide layer, removing nickel thin film layer and copper filling layer.

ZHU J, KANG X

Graphene infrared sensor structure, has two ferroelectric material layers formed on graphene layer, where ferroelectric material layers have opposite repolarization directions to detect infrared signal.

KANG X

Graphene infrared sensor structure, has ferroelectric material layer fixed between graphene upper electrode and graphene lower electrode, where residual polarization of layer affects carrier density of electrodes to form differential signal.

KANG X

CMOS image sensor, has graphene layer for covering gate dielectric layer on PN photodiode, where graphene layer obtains negative bias voltage when CMOS image sensor is in working state, and gate dielectric layer located at sidewall spacer.

SUN D