国家/地区 美国（4）
IPC部 C（4） H（3） B（2）
IPC大类 C01（3） H01（3） C09（2）
IPC小类 C01B（3） H01M（2）
IPC H01M004/587（2）
发明人 COSTA P M F J（2）
公开年 2017（4）
申请年 2017（3） 
专利权人 UNIV KING ABDULLAH SCI TECHNOLOGY（4）

Production of graphene oxide used in e.g. energy storage device, involves oxidizing graphite, adding potassium permanganate, water, heating, adjusting graphene oxide-dispersion, adding alcohol and washing isolated graphene oxide.

RASUL S, COSTA P M F J, ALAZMI A

Carbon-based semiconductor material useful as a semiconductor layer of a device, comprises reduced graphene oxide that is reduced so that the semiconductor material has a specified resistance/humidity variation.

TAI Y, LUBINEAU G

Producing graphene used in e.g. energy storage system, electronic industry and energy industry, comprises subjecting at least one graphite intercalation compound to expansion conditions.

PATOLE S P, COSTA P M F J

Composition used for e.g. forming article e.g. sheet, membrane and film for pressure sensor, comprises graphene material(s) and metal(s).

CHEN Y, KHASHAB N M, TAO J