国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y099/00（2）
发明人
公开年
申请年 2011（2）
专利权人 US SEC OF NAVY（2）

Preparing surface of epitaxial graphene sample for atomic layer deposition (ALD) of dielectric in ALD reactor, comprises pre-treating (e.g. immersing in e.g. hydrofluoric acid) sample ex situ outside reactor and then in situ inside reactor.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Three-terminal junction transistor device for use in e.g. digital circuits, has collector adjacent to side of graphene material base layer, and electrodes connected to and forming electrical connection with emitter, collector and base.

KUB F J