国家/地区 美国（4） 韩国（2）
IPC部 C（4） B（3）
IPC大类 C01（4） B82（3） C23（3）
B01（2） B32（2）
IPC小类 C01B（4） C23C（3） B01J（2）
B32B（2） B82Y（2）
IPC B01J019/12（2） B32B009/00（2） C01B031/04（2）
C23C016/26（2）
发明人 AHN J（4）
公开年
申请年 2009（2） 
专利权人 KOREA INST SCI TECHNOLOGY（4）

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U