国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 CHEN T（2）
公开年
申请年
专利权人

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Formation process of graphene-coated glass, involves heating sandwich structure to predetermined temperature above release temperature of thermal release tape to remove tape or graphene from flexible glass substrate.

JOHNSON B Y, LIU X, MAZUMDER P, SONI K K, CHEN T L, MARTINFRANCES M M, PRUNERI V, CHEN T, MARCHENA M, MARTIN F M M