国家/地区 韩国（2） 美国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/16（2）
发明人 CHOI W（2）
公开年 2014（2）
申请年 2013（2）
专利权人

Manufacturing single step thin film transistor, comprises preparing ink including graphene oxide or reduced graphene oxide dispersed solution; forming pattern on substrate; and forming semiconductor channel, and source and drain electrodes.

LIM J A, SONG Y W, HONG J M, CHOI W K, EOM D S, SONG Y, HONG J, CHOI W

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L