国家/地区 中国（3）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 DAI Y（3）
公开年 2013（2）
申请年 2013（3）
专利权人

Channel width controlled large area graphene nanometer belt Fin-FET device, has transfer graphene-containing layer formed on source/drain electrode of substrate, where part of graphene-containing layer is located on medium layer of gate.

SUN Q, WANG P, ZHOU P, ZHANG W, DAI Y

Preparation of shielding paint involves performing Hummers preparation to obtain aqueous graphene oxide solution, dissolving in N,N'-dimethyl formamide, and modifying aqueous poly(urethane-acrylate) emulsion.

YANG D, XU J, DAI Y, QIU F, RONG X

Manufacture of anode material used for e.g. dye-sensitized solar cell, involves preparing composite fiber, providing on surface of quartz substrate, thermally decomposing and performing electrostatic spraying of graphene.

WANG Y, JING Y, CHEN Y, DAI Y, SUN Y, LONG H, SHI Y, WANG X