国家/地区 中国（8）
IPC部 C（4） B（3）
IPC大类 B01（3） C02（3）
IPC小类 C02F（3） B01D（2）
IPC C02F001/28（2） C02F009/08（2）
发明人 DENG J（8）
公开年 2013（5） 2014（2）
申请年 2013（8）
专利权人 DENG J（5） YANG YANG IN.（2）

Simple macrographene dispersion of molybdenum sulfide catalyst by adding graphene, molybdenum sulfide precursor and reducing agent into mill pot, ball milling under inert gas protective atmosphere, taking sample, filtering, and drying.

BAO X, DENG D, DENG J

Pneuma organic waste treatment device, has tank body connected with air inlet and air outlet that are arranged with graphene modified absorbing layer, where graphene modified absorbing layer is arranged on heating device.

DENG J

Graphene absorption decomposition organic waste gas processing method, involves preprocessing organic waste gas, and performing adsorption of organic matter using multilayer graphene or modified graphene as absorption material.

DENG J

Sewage purification combined graphene device comprises ultrasonic wave generating device, fan, membrane separator, water outlet end, water inlet end and reactor provided with solid catalyst and multilayer graphene.

DENG J, CHEN S

Graphene oxide drug carrier useful for delivering antitumor drug, comprises several nanoparticles comprising inner core formed by graphene oxide and shell formed by pyrenyl disulfide group polyethylene glycol.

LIU B, DENG J, CAI L

Graphene adsorbed continuous filtration process for treating sewage, involves setting graphene-containing filler and filter material and filter adsorption layer, followed by giving out treated water after removing contaminants.

DENG J

Combined graphene device for purifying sewage, has reactor whose water outlet end is connected with water inlet end of membrane separator, where reactor is provided with catalyst and multilayer graphene.

DENG J

Transparent electrode graphene film preparing method, involves arranging p-type and n-type gallium nitride layers on LED epitaxial wafer, and removing impurities on graphene film and indium tin oxide thin layer by photo-etching process.

SUN J, MAO M, XU K, XU C, DENG J, ZHENG L, XIE Y, ZHU Y