国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L031/18（2）
发明人 DING D（2）
公开年
申请年
专利权人 CHINA ELECTRONICS SCI TECH NO 18 RES I（2）

Graphene/plasma excimer black silicon near infrared detector structure, has silicon dioxide layer that is provided with front electrode, graphene layer whose peripheral side is extended and in contact with electrode and back electrode provided on back of silicon chip.

ZENG Q, DING D, HE F, LAN Z, SONG Y

Graphene near infrared detector has first reflective layer that is arranged between substrate and first light-transmitting layer and second reflective layer that arranged between electrode layer and second light-transmitting layer.

LAN Z, HE F, DING D, ZHANG H