国家/地区 中国（3）
IPC部 C（3） H（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3）
发明人 GAO C（3）
公开年
申请年
专利权人 HANGZHOU GAO.（2）

Defect state graphene/semiconductor heterojunction photodetector comprises two-layered structure comprising one layer which is semiconductor layer, and other layer which is defect state graphene layer having preset thickness.

GAO C, CAO X, XU Y, PENG L

Preparing three-dimensional graphene comprises heat-treating industrial waste carbon material, electrolyzing, concentrating graphene carbon point solution, concentrating the solution, freeze-drying, and calcining.

GAO C, HUANG H, PENG L

Graphene-based dye-sensitized transparent solar cell comprises transparent electrodes.

GAO C, PENG L, YU D, SHEN Y, GOPOSEMI C