国家/地区 台湾（2）
IPC部
IPC大类
IPC小类
IPC
发明人 HAN S（2）
公开年
申请年
专利权人

Structure and method for a graphene-based apparatus comprises acts of forming a graphene layer on a metal layer; forming a protective layer on the graphene layer.

HAN S, CAO Q

Three-dimensional integrated circuit (IC) structure for electronic application, has upper active devices that are formed using upper graphene layer formed over insulating layer, and interconnected with lower active devices.

GUO D, HAN S, LIN C, SU N, HEN S, HAN S J, LIN C H