国家/地区 美国（4）
IPC部 C（4） B（3） H（3）
IPC大类 H01（3） B82（2） C01（2）
IPC小类 B82Y（2） C01B（2）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B031/04（2）
发明人 KANG K（4）
公开年
申请年
专利权人

Apparatus for producing transition metal dichalcogenide (TMD) transistor arrays of electronic device, has single-layer transition metal dichalcogenide formed only on substrate and lateral edges of monolayer graphene film.

PARK J, GAO H, GUIMARAES M H D, RALPH D C, KANG K, XIE S

Manufacturing graphene used as anode material in lithium secondary battery, by forming graphite oxide from graphite, subjecting graphite oxide to hydrochloric acid treatment, and subjecting treated graphite oxide to heat treatment.

KANG K, KIM H, KANG K S, KIM H G

Adhesive useful for bonding aluminum-polyurethane composite material, comprises graphene oxide comprising epoxy, hydroxy or carboxylic acid group, and alkoxysilane compound comprising amine, epoxy, carboxylic acid, hydroxy or thiol group.

CHO H C, LEE S H, LEE D S, KANG K H, CHEOL C H, HUN L S, SU L D, HO G G, KANG K, LEE D, LEE S, CHO H

Manufacture of graphene involves obtaining forming graphite intercalation compound using alkaline metal or its ion, or alkaline earth metal or its ion, and dispersing graphite intercalation compound.

JEON S, KANG K, KWON J, PARK K, SEO D, JEON S W, KANG K S, KWON J Y, PARK K H, SEO D H, HWA S D, SEOK G G, YEONG K J, U JEON S