国家/地区 韩国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 KIM I H（2）
公开年 2022（2）
申请年
专利权人

Flash memory device for use in neuromorphic computing system, has blocking insulating layer that is arranged on floating gate and has second dielectric constant greater than first and upper gate that is disposed on blocking insulation layer.

KWAK J, PARK E P, LEE S Y, KIM I H, PARK J K, KIM J, KIL P J, JUNG Y J, JEONG Y, PARK J, KIM I, LEE S, PARK E, KWAK J Y

Negative electrode active material used for lithium secondary battery, comprises nanoparticles, and polymer binder surrounding nanoparticles comprising core comprising silicon, shell formed on surface of core and including silicon oxide, and formed on surface of shell and comprising carbon.

KIM C J, JI D H, KIM I H, AN H J, JOON K C, ZEE D, AN H