国家/地区 韩国（4） 美国（2）
IPC部 C（3） H（3）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（2）
发明人 KIM J T（4）
公开年 2016（4）
申请年 2014（2） 
专利权人 ELECTRONICS .（3）

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Manufacture of graphene involves forming double metal catalyst layer comprising two metal layers by calculating thickness ratio of metal layers, and growing graphene using chemical vapor deposition on double metal catalyst layer.

CHOI J S, CHOI H K, CHOI C G, YU Y J, KIM J T, CHUNG K H, HWANG C Y

Conductive particles for anisotropic conductive film and anisotropic conductive connection material, have coating layer provided on surface of resin particles, and graphene layer provided on surface of coating layer.

KIM K H, SON H J, KIM J T, JEONG S H, PARK K Y, LEE J Y, PARK J H, CHU Y C

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S