国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人 KIM S H（2）
公开年
申请年
专利权人 KOREA ELECTROTECHNOLOGY RES INST（2）

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Manufacture of single-layered reduced graphene oxide dispersion solution for forming transparent conductive film, involves synthesizing powder-form oxidized graphite flakes using graphite flakes, dispersing by shear stress, and reducing.

JEONG S Y, LEE G W, HAN J T, JEONG H J, KIM S H, YEOL J S, UNG L G, TAK H J, JIN J H, HUN K S