国家/地区 韩国（4）
IPC部 B（2） C（2） H（2）
IPC大类 B01（2） C01（2） C23（2）
H01（2）
IPC小类 B01J（2） C01B（2） C23C（2）
H01L（2）
IPC B01J019/08（2） C01B031/02（2） C23C016/26（2）
发明人 LEE K J（4）
公开年 2013（4）
申请年 2011（3） 
专利权人 KOREA ADV IN.（2） KOREA ADVANC.（2）

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Semiconductor opto-electronic device, has P-type semi-conductor purpose transparent electrode covering P-type semiconductor, P-type electrode connected with transparent electrode, and graphene material provided with alloy.

SUH E K, LEE K J, SEO T H

Organic light emitting diode for display device, includes light emitting polymer layer which is formed on thin film layer including graphene, and cathode which is formed on light emitting polymer layer.

LEE K J, HAM S J, LIM J H