国家/地区 中国（3）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 LIANG Q（3）
公开年 2014（2）
申请年 2013（3）
专利权人 SHENZHEN BTR.（2） SHENZHEN BTR.（2）

Semiconductor structure manufacturing method, involves forming interlayer medium layer on contact hole of metal-graphene, and filling electric conduction material in contact hole.

LIANG Q, YE T, ZHU H, ZHONG H

Preparation of graphene powder material e.g. as electroconductive material, involves reacting natural graphite flake, sulfuric acid solution and oxidizing agent, heating, forming graphite intercalation compound, grinding, and drying.

KONG D, LIU D, MEI J, LIANG Q

Porous graphene nanomaterial has large specific surface area and tapped density, prepared by dispersing graphene, carbonizing agent and pore-forming agent into solvent, and carbonizing dispersion in gas atmosphere.

KONG D, MEI J, LIANG Q, SHI H