国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 LIU W（2）
公开年
申请年
专利权人

Composition used for fabricating semiconductor structure on semiconductor device for removing metal-containing layer of pellicle structure, comprises water, oxidizing agent(s), and acid(s).

CHEN C, CHANG C, LEE Y, LIU W D, WINDOW C, LEE W, LU W, LIU W, LI Y, ZHANG Z, CHEN Z

Preparation of graphene/silver composite material involves mixing reducing agent solution and graphene oxide, adding silver nitrate solution, freeze-drying, reducing graphene oxide/silver composite powder, molding and sintering.

CHEN L, LIU W, MAO L, WANG P, SHEN M