国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LU G（2）
公开年 2015（2）
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H