国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 MA X（2）
公开年
申请年 2011（2）
专利权人

Diamond-like semiconductor substrate source/drain buried type graphene transistor device for small size and high frequency integrated circuit, has insulating medium layer arranged on upper part of metal gate electrode.

MA X, YIN H

Preparation of graphite oxide/poly(N-isopropyl acrylamide) composite hydrogel comprises putting graphite oxide in water, adding graphene oxide colloid solution into N-isopropyl acrylamide, crosslinker, initiator, and charging nitrogen.

JI Q, LI Y, MA X, WANG W, XIA Y