国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 PENG D（2）
公开年 2018（2）
申请年
专利权人

High-sensitivity photoelectric detector manufacturing method, involves matching silicon dioxide substrate with boron element, and forming carbon film between n-type silicon chip and top electrode and contacted with graphene.

ZHANG X, PENG D, DIAO D

Thermal interface material comprises graphene composite interface material gasket, spraying resin and thermally conductive insulating powder.

LIU W, PENG D, WANG L, ZHANG H, ZHENG J