国家/地区
IPC部
IPC大类
IPC小类
IPC
发明人 PENG L（2）
公开年 2021（2）
申请年 2019（2）
专利权人

Self-aligned patterning method for source and drain contact metals of undoped thin film transistors, involves using photoresist as mask, and opening window to define total pattern size of source and drain regions and gate.

QIU C, MENG L, LIANG S, ZHANG Z, PENG L

Three-dimensional porous material used as carbon dioxide adsorbent in gas separation processes, electrocatalysts, and catalysts and in highly suitable materials in supercapacitors, in which walls of pores are constituted by graphene sheets.

GARCIA GOMEZ H, GARCIA MULERO A, PRIMO ARNAU A M, PENG L