国家/地区 中国（3）
IPC部 C（3） H（2）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3）
发明人 SHANG Y（3）
公开年 2020（3）
申请年 2019（2） 
专利权人 KUANGCHI ADV.（2） SHENZHEN GUA.（2）

Preparing high-purity semi-insulating silicon carbide substrate-based periodic pn junction graphene comprises e.g. cutting, grinding and polishing high-purity semi-insulating silicon carbide crystals, and performing passivation treatment.

ZHANG F, YANG K, LU Y, LIU X, NIU X, CUI J, SHANG Y

Preparing three-dimensional graphene wave absorbing material comprises e.g. adding reducing agent into graphene oxide aqueous solution and placing three-dimensional graphene material in inert atmosphere.

LIU R, ZHAO Z, LI Y, PING Y, FU L, SHANG Y

Preparing molybdenum disilicide-three-dimensional graphene complex material useful in wave absorbing material or stealth material comprises preparing graphene oxide aqueous solution, three-dimensional graphene hydrogel and drying.

LIU R, ZHAO Z, LI Y, PING Y, FU L, SHANG Y