国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 WANG F（3）
公开年 2011（3）
申请年 2011（2） 
专利权人 UNIV CHANGCH.（2）

Preparing graphene material using laser heating device, comprises e.g. annealing nickel film plated on substrate placed on quartz tube and regulating laser optical path and parameters on laser, injecting argon and hydrogen and heating.

FANG F, FANG X, HAN Z, LI J, TAN X, WANG F, WANG X, WANG Y, WEI Z, CHEN F, FANG D, GAO X, CHU X, NIU S, TANG J

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T

Graphene device e.g. dual gate graphene FET has bilayer graphene which is coupled to two gate structures and located partially between two gate structures.

WANG F, ZHANG Y, TANG T, CROMMIE M F, ZETTL A K, GIRIT C