国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 WANG G（2）
公开年
申请年 2009（2）
专利权人

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Preparing organic polysulfide polymer-sulfonated graphene conductive composite used as anodic material for lithium secondary battery, involves placing graphite oxide in water solution.

JIN L, LI L, LI X, WANG G