国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 WEI T（2）
公开年 2019（2）
申请年 2019（2） 
专利权人

Preparing nano-grade sheet graphene oxide material comprises e.g. using glass carbon material, immersing in electrolyte, inserting into cathodeelectrode, applying a voltage, oxidizing, centrifuging, washing, dialyzing and drying.

PEI S, WEI T, REN W, CHENG H

Schottky diode of semiconductor power device, has ohmic contact electrode that is formed on second substrate layer to form cathode electrode, and Schottky contact electrode is formed on graphene layer to form anode electrode.

RAN J, WEI T, YAN J, WANG J