国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 WON D K（2）
公开年 2011（2）
申请年
专利权人 SAMSUNG TECH.（2）

Method for transferring graphene from graphene forming structure onto desired object e.g. circuit substrate, involves separating oxide layer from metal catalyst layer and removing metal catalyst layer by using etching solution.

CHO S, WON D, CHO S H, WON D K

Graphene sheet manufacturing method, involves preparing and connecting base member with catalyst metal layer, fixing graphene layer with base member, and removing catalyst metal layer from separated graphene layer.

WON D K, CHO S M, RYU J C