国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 WU D（2）
公开年 2010（2）
申请年 2009（2）
专利权人 UNIV TSINGHU.（2）

Graphene/silicon Schottky junction, has silicon dioxide layer whose middle part is provided with vent, and graphene membrane formed on surface of stage hole, where end of graphene membrane is provided with conductive wire.

JIA Y, LI C, LI X, LI Z, WANG K, WEI J, WU D, ZHU H

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H