国家/地区 中国（2）
IPC部 C（3）
IPC大类
IPC小类
IPC
发明人 XIE S（3）
公开年 2017（3）
申请年 2017（3）
专利权人

Apparatus for producing transition metal dichalcogenide (TMD) transistor arrays of electronic device, has single-layer transition metal dichalcogenide formed only on substrate and lateral edges of monolayer graphene film.

PARK J, GAO H, GUIMARAES M H D, RALPH D C, KANG K, XIE S

Preparing grapheme-loaded silicon dioxide hybrid filler comprises e.g. using the aqueous dispersion of the plant polyphenol physically modified graphene and dispersion of silane coupling agent chemically modified silica, mixing and stirring.

ZHAO S, LI L, XIE S, ZHAO Z, XIN Z

Highly efficient uranium adsorbent for bentonite graded graphene oxide preparation for adsorbing bentonite graded graphene oxide, involves dispersing graphene oxide in deionized water to obtain oxidized graphene suspension.

LIU H, XIE S, LIAO J, YAN T