国家/地区 中国（2）
IPC部
IPC大类
IPC小类
IPC
发明人 XU H（2）
公开年
申请年
专利权人

Vertical variable resistance memory device has pillar structure that is extended in first direction on substrate and penetrating gate electrodes and first insulating patterns, and variable resistance pattern that is formed on sidewall of vertical electrode.

KIM H C, KIM Y, SEO H W, RYU S, LEE K H, HONG J, LI J, YU S, XU H, JIN R, KIM H

Manufacture of graphene oxide involves contacting one end face of carbon-based three-dimensional material electrode(s) in parallel with electrolyte solution, electrolyzing, electrochemically-oxidizing, and cutting graphite sheet layers.

XU H, ZHOU Q