国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B032/184（2）
发明人 ZHANG F（4）
公开年 2020（4）
申请年 2020（4）
专利权人

Preparing high-purity semi-insulating silicon carbide substrate-based periodic pn junction graphene comprises e.g. cutting, grinding and polishing high-purity semi-insulating silicon carbide crystals, and performing passivation treatment.

ZHANG F, YANG K, LU Y, LIU X, NIU X, CUI J, SHANG Y

Preparation of graphene microtube used for three-electrode system by using ethanol as carbon source, nitrogen or inert gas as auxiliary gas, and tantalum wires arranged in parallel and positioned on same plane as deposition substrate.

LI M, ZHANG F, LI H, LI C, YANG B

Preparation of porous film for shielding electromagnetic waves in electronic device, involves dispersing polystyrene microspheres, graphene oxide and carbon nanotubes in solvent, filtering and sandwiching film between graphite plates.

LI Y, LIU J, ZHANG F

Preparing graphene using waste lithium-ion power battery, comprises e.g. charging waste lithium-ion power battery and converting graphite of cathode into LiC6 and LiC12; and crushing cathode of waste lithium ion battery.

ZHANG F, HE K, ZHANG Z