国家/地区
IPC部
IPC大类
IPC小类
IPC
发明人 ZHOU C（2）
公开年 2012（2）
申请年
专利权人

Method for manufacturing FET e.g. self-aligned graphene FET for graphene device, involves inhibiting deposition of metal layer over specific portion of thin film proximate foot region by head region of gate electrode.

ZHOU C, BADMAEV A, WANG C, CHE Y

Method for preparing graphene and high temperature inorganic salt phase change composite material for industrial production, involves dispersing graphite oxide in water, centrifuging obtained mixture and collecting supernatant layer.

ZHANG D, ZHANG Z, ZHOU C