国家/地区 中国（2）
IPC部 B（2）
IPC大类
IPC小类
IPC
发明人 ZHU W（2）
公开年
申请年 2011（2）
专利权人

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A

Preparation of nano gold/graphene oxide composite material used as conductive material, involves diffusing graphene oxide in water, and directly reducing chloroauric acid by in-situ method to form uniformly arranged nano gold particles.

DING S, GAO B, SUN Y, ZHU W