国家/地区 中国（4）
IPC部 B（5） C（2）
IPC大类 B01（5） C01（2）
IPC小类 B01J（5）
IPC B01J003/06（5）
发明人
公开年 2022（5）
申请年 2021（2）  2022（2） 
专利权人 CENT HIGH PR.（2）

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Preparing high pressure device separated high pressure state material comprises adding carbon material and target material into high pressure device and processing at high temperature and high pressure to obtain diamond high pressure cabin containing high pressure material inside.

MAO H, MAO L, ZENG Z, ZENG Q

Gem grade diamond synthesis device with large cavity comprises pyrophyllite composite block internally provided with hollow cavity, two ends of hollow cavity are symmetrically provided with conductive steel ring and conductive metal sheet.

WANG R, HUANG H, WANG B, LI K

Electrochemical nano-pressure cavity comprises miniature battery system and control system, miniature battery system is a chemical energy storage power source, and includes battery cathode material that can desorb/intercalate cations.

YANG W, CHEN Y, GAO X

Graphene preparation device based on graphene coating comprises supporting mechanism, lifting mechanism, high-pressure impact mechanism, which are set at lower end of lifting mechanism, and separation oscillation mechanism set at lower end of high-pressure impact mechanism.

SONG J, LIU P, WANG D