国家/地区 韩国（2） 美国（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B01J019/10（3）
发明人 CHOI J Y（3）
公开年 2014（2）
申请年
专利权人

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y

Apparatus, useful for preparing graphene-structured material for e.g. filler, comprises supply hopper to supply graphite oxide, supply line of which end is fixed to hopper, and reducing atmosphere gas supply unit connected to supply line.

JI B K, CHOI J Y, SHIN C M

Apparatus for manufacturing nano-size graphene-structured material for filler, has feeding line that is connected to lower portion with thermal expansion outlet line connected to top of perpendicular fluidized bed furnace.

JI B K, CHOI J Y, SHIN C M