国家/地区
IPC部 B（2） C（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC B01J023/755（2）
发明人
公开年 2014（2）
申请年 2012（2）
专利权人

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Method for manufacturing graphene structure using carbon black, involves heat treating graphite painted candles, graphite painted candles are mixed with carbon black and carbon black is mixed with wet duster.

LEE J H, LEE B H, KWAN W L, REYUN K L