国家/地区 韩国（5） 美国（4） 中国（3） 欧洲专利局（EPO）（3） 日本（3） 世界知识产权组织（3） 台湾（2）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C01B031/04（5）
发明人 LEE J（5）
公开年 2014（2） 2015（2）
申请年 2013（2）  2014（2） 
专利权人 HANWHA CHEM .（2） SNU R DB FO.（2） TOSHIBA SAMS.（2） UNIV SEOUL N.（2）

High pressure homogenization apparatus for manufacturing graphene, has channel module including baffle to partition micro-channel into multiple spaces along width direction or height direction.

KIM E J, YOO K H, IM Y H, LEE J Y, KWON W J, KIM E, YOO K, IM Y, LEE J, KWON W

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Graphene comprises oxygen atom content in predetermined range, and has carbon/oxygen weight ratio of predetermined range.

LEE J S, DO S H, JEON S Y, KONG J H, DO SEUNG H, LEE J, DO S, JEON S, KONG J

Apparatus for fabricating graphene comprises light source for irradiating graphite oxide layer on substrate; light source for irradiating irradiated graphite oxide layer; control unit for controlling irradiation from the light sources.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L

Fabricating graphene, i.e. an allotrope of carbon, comprises irradiating graphite oxide layer on substrate with light from first light source, and irradiating the irradiated graphite oxide layer with light from second light source.

SONG B, CHOI K, CHOI N, SHIM H, JUNG H, LEE J, BYUNG Y S, KIL S C, NAG E C, HYOUNG S S, HAN Y J, JUNG H L