国家/地区
IPC部 B（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC C01B032/15（2）
发明人 WANG H（2）
公开年 2016（2）
申请年 2015（2） 
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Producing graphene structure doped porous carbon material for producing catalyst, catalyst carrier or adsorbent, involves dissolving chitosan, urea and heteroatom precursor in water and then drying to give mixed powder.

PENG F, WANG H, YU H, ZHONG G