国家/地区 台湾（3） 美国（3）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4） C30B（4） B82Y（2）
IPC C01B032/184（4）
发明人 HUANG K（2） KOU C（2）
公开年 2017（4）
申请年 2015（2）  2016（2） 
专利权人 IND TECHNOLO.（2）

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C