国家/地区 中国（3） 韩国（3） 美国（3） 世界知识产权组织（3）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C01B031/02（3）
发明人 YOON J（2） YOON J H（2）
公开年 2014（2）
申请年 2013（3）
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Graphene synthesizer used for synthesizing graphene, comprises heater unit for applying heat to continuous catalytic metal thin film, susceptor unit arranged between catalytic metal thin film and heater, and source material supply unit.

YOON J, YOON J H

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A