国家/地区 中国（7）
IPC部 C（7） B（2）
IPC大类 C01（7） C09（2）
IPC小类 C01B（7）
IPC C01B032/194（7）
发明人 WANG C（7）
公开年 2020（3） 2021（3）
申请年 2020（7）
专利权人

Preparing sulfur-oxygen co-doped graphene involves placing graphite oxide and grinding balls into grinding tank, and vacuumizing grinding tank after sealing, and installing grinding tank on planetary ball mill for grinding to obtain sulfur-oxygen co-doped graphene.

GAO H, WU S, JIA Y, WANG C

Modifying graphene comprises e.g. storing graphene, surface treatment agent, solvent, fusing agent and transparent substrate separately, using ultrasonic stirring device, placing graphene, adding solvent, and ultrasonically stirring.

WANG C, QIAN Z, ZHANG B, ZHANG Q, JIN S, ZHOU Q, YANG D

Preparing modified graphite (alkene) nano-sheet composite powder, comprises e.g. soaking the graphite (alkene) nano sheet in nitric acid solution and mechanically stirring, taking out graphite (alkene) nano sheet and washing and filtering.

WANG C, XU Y, SUN Z, ZHONG B

Sintering device for processing graphene, comprises sintering chamber, where four sides of outer surface of lower end of sintering chamber are welded with supporting legs, and upper end cover of sintering chamber is provided with sealing cover.

OUYANG Q, HE Y, HU M, JIANG G, ZHAO Q, ZHANG S, WANG C

Solving layering problem of graphene processing by compounding release film with adhesive layer on back of graphene, adhering graphene on adhesive layer, cutting graphene, and separating filling middle area and adjacent products.

WANG C, ZHU L

Preparing self-supporting graphene carbon conductive network material comprises e.g. diluting concentrated hydrochloric acid, adding tetraethyl silicate and graphene solution, sonicating, sintering, adding hydrofluoric acid, and etching.

LUO W, WANG C, MAI L, YU R

Graphene heat-conducting material useful for preparing electronic device comprises base material and graphene nanosheet, which is oriented and arranged inside base material.

QIN W, HUANG F, YUE W, CHEN H, WANG C