国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC C04B035/58（2）
发明人
公开年
申请年
专利权人

Ceramic structure for forming component of plasma processing apparatus, contains silicon carbide, silicon carbonitride, titanium carbide or titanium carbonitride as main component, and two main surfaces having different carbon concentration.

HAMASHIMA H

Method for forming ceramic matrix composite structure, involves providing mixture of carbon nanotubes, graphene, and silicon carbon nitride, heating mixture to bond carbon nanotubes and graphene, and sintering carbon nitride in mixture.

BRALEY D J, BELK J H, BRELEY D J, BRALEY D Y, BELK Y H