国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年
申请年 2015（2）
专利权人

Method for manufacturing large area graphene for graphene-based photonics device e.g. saturable absorber, involves several resist layers from main graphene layer to reveal final graphene layer.

SULTANA M, LI M J, YU A W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K