国家/地区 台湾（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6） C23C（6） B82Y（5）
B32B（3） H01B（3） B82B（2）
C03C（2） C23F（2）
IPC C23C016/26（6）
发明人 FAN F Y（5） FAN S（5） JIANG K（5）
LIN X（5） XIAO L（5） LIN X Y（4）
公开年 2012（5）
申请年 2011（6）
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） UNIV TSINGHU.（5）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Graphene/carbon nanotube composite structure comprises carbon nanotube film structure having carbon nanotubes or nanotube wires and micropores; and graphene film located on a surface of film structure, and covering all of the micropores.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Method for depositing graphene on substrate for semiconductor device, involves heating substrate in chemical vapor deposition chamber and flowing carbon precursor into chamber.

PADHI D, JANZEN J, SHAIKH S, KIM B, CHIN B, KIM B H