国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B01（2） B82（2） C01（2）
C23（2） H01（2）
IPC小类 B01J（2）
IPC B82Y030/00（2）
发明人 CHOI J Y（2）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z