国家/地区 中国（2）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B007/10（3）
发明人 REN H（2） TAN G（2） XIA A（2）
ZHAO C（2）
公开年 2016（3）
申请年 2016（2） 
专利权人 UNIV SHAANXI.（2）

Preparing reduced graphene oxide-bismuth vanadate crystal with adsorption property comprises e.g. dissolving bismuth(iii) nitrate pentahydrate in dilute nitric acid and stirring, adding oleic acid, n-heptane and acetone, stirring and drying.

TAN G, XIA A, ZHAO C, REN H

Preparing monoclinic phase bismuth vanadate/graphene oxide (GO)/RGO crystal comprises e.g. dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, then adding oleic acid, n-heptane, ultrasonic dispersing and post processing.

TAN G, XIA A, ZHAO C, REN H

Power storage device for display device and electronic equipment comprises positive electrode containing positive electrode current controller and positive electrode active material layer that contains graphene and multiple oxide crystals.

MIWA T, NOMOTO K, MOMO J