国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B023/02（2）
发明人
公开年
申请年 2010（2）
专利权人

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Saturable absorber device for fiber laser, has saturable absorber material supported by optical fiber, which is provided with graphene, graphene-polymer composite, graphene oxide, graphene derivative or functionalized graphene.

LOH K P, BAO Q, TANG D Y, ZHANG H, KIAN L P, BAO O, LOH K, TANG D